发明名称 |
Semiconductor switching device |
摘要 |
A semiconductor switching device of mirror logic includes two FETs having a gate width of 600 mum, a common input terminal, two control terminal and two output terminals. The resistors connecting the control terminals and the gate electrodes of FETs are placed underneath a pad metal layer extending from the common input terminal. Both FETs extend into the space between the control terminals and the output terminals. The device can be housed in the same package as the device of non-mirror logic.
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申请公布号 |
US2002185667(A1) |
申请公布日期 |
2002.12.12 |
申请号 |
US20020163873 |
申请日期 |
2002.06.07 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
ASANO TETSURO;HIRAI TOSHIKAZU;SAKAKIBARA MIKITO |
分类号 |
H01L21/822;H01L21/8232;H01L27/04;H01L27/06;H01L27/095;H03K17/00;H03K17/041;(IPC1-7):H01L31/032;H01L29/80;H01L31/033 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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