发明名称 GRADED COMPOSITE LAYER AND METHOD FOR FABRICATION THEREOF
摘要 Within both a fabrication and a method for fabricating the fabrication there is provided a second layer of a second material separated on one of its sides from a first layer of a first material by a first transition layer of a transition material. The second layer of the second material is also separated on the other of its sides from a third layer of the first material by a second transition layer of the transition material. Within both the fabrication and the method for fabricating the fabrication, the transition material provides a continuous transition between the first material and the second material.
申请公布号 US2002185711(A1) 申请公布日期 2002.12.12
申请号 US20010876446 申请日期 2001.06.07
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LIN SHIH-CHI
分类号 C23C16/02;C23C16/30;H01L21/314;(IPC1-7):H01L23/58;H01L21/31;H01L21/469 主分类号 C23C16/02
代理机构 代理人
主权项
地址