发明名称 Magnetic tunneling junction and fabrication method thereof
摘要 A fabrication method of a magnetic tunnel junction includes the steps of: forming a magnetic tunnel junction constructed having a first magnetic layer, a tunnel barrier formed at an upper surface of the first magnetic layer and a second magnetic layer formed at an upper surface of the tunnel barrier; and thermally treating the junction rapidly for 5 seconds ~10 minutes at a temperature of 200~600° C. to re-distribute oxygens in the tunnel barrier and make the interface between the tunnel barrier and the magnetic layer to be even. The tunneling magnetoresistance and thermal stability of the magnetic tunnel junction can be improved through the rapid thermal annealing.
申请公布号 US2002185196(A1) 申请公布日期 2002.12.12
申请号 US20020145167 申请日期 2002.05.13
申请人 KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 SHIN KYUNG-HO;LEE WOO-YOUNG;PARK YOUNG-JOON;LEE KYUNG-IL;HA JAE-GEUN
分类号 G11B5/39;H01F41/30;H01L43/08;H01L43/10;H01L43/12;(IPC1-7):H01F41/00 主分类号 G11B5/39
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