Production of a semiconductor layer on a crystalline substrate by molecular beam epitaxy used in the semiconductor industry comprises growing at a specified temperature using a vicinal substrate having a predetermined mis-orientation

摘要

Production of a semiconductor layer on a crystalline substrate by molecular beam epitaxy comprises growing at a temperature of 150-350 deg C. The substrate is a vicinal substrate having a predetermined mis-orientation. An Independent claim is also included for a layer arrangement consisting of a vicinal substrate having a mis-orientation. Preferred Features: The semiconductor layer consists of a III-V compound semiconductor, especially gallium arsenide (GaAs), indium gallium arsenide (InGaAs), aluminum gallium arsenide (AlGaAs) or gallium manganese arsenide (GaMnAs), is monocrystalline and pseudo-morphic, and has a point defect density of more than 10<19> cm<-3>.