发明名称 DUAL DAMASCENE MULTI-LEVEL METALLIZATION
摘要 <p>An interconnect structure, comprising: a lower level wire (200) having a side and a bottom, the lower level wire comprising: a lower core conductor (220) and a lower conductive liner (215), the lower conductive liner on the side and the bottom of the lower level wire; an upper level (205) wire having a side and a bottom, the upper level wire comprising an upper core conductor (230) and an upper conductive liner (225), the upper conductive liner on the side and the bottom of the upper level wire; and the upper conductive liner in contact with the lower core conductor and also in contact with the lower conductive liner in a liner-to-liner contact region (240A), (240B).</p>
申请公布号 WO2002099873(A2) 申请公布日期 2002.12.12
申请号 EP2002005282 申请日期 2002.05.14
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