Semiconductor element used as a hetero-structure bipolar or field effect transistor has semiconductor layer system formed on a substrate.

摘要

Semiconductor element comprises a substrate; a first semiconductor layer system grown on the substrate and having a first semiconductor layer made from a first semiconductor material with a first band gap; a second semiconductor layer system grown on the first semiconductor layer and having a second semiconductor layer made from a second semiconductor material with a second band gap; and a third semiconductor system grown on the second semiconductor layer system having a third semiconductor layer made from a third semiconductor material with a third band gap. An Independent claim is also included for a process for the production of the semiconductor element. Preferred Features: The first and third semiconductors layers are structured in such a way that one forms the collector and the other the emitter of the transistor. The second semiconductor layer is a spacer layer grown on the base of the transistor.