发明名称 Method for producing thin film
摘要 A thin film producing method in which the wafer film forming processing for a wafer to be a product may be carried out efficiently to shorten the processing time and to raise the operating ratio of the device. In a thin film deposition method using a single wafer processing for forming a thin film by chemical reaction under heat, a pseudo-process is provided which operates to suppress variations in the film thickness caused by the temperature in a reaction chamber 11. This pseudo process is the pre-heating processing of heating the reaction chamber 11 before actually charging the wafer W into the reaction chamber 11.
申请公布号 US2002187649(A1) 申请公布日期 2002.12.12
申请号 US20020162728 申请日期 2002.06.04
申请人 NEC CORPORATION 发明人 NAKAMURA NAOKI;FUKUMAKI NAOMI;ABE TAKAYUKI
分类号 C23C16/44;C23C16/52;H01L21/31;H01L21/314;H01L21/316;H01L21/318;(IPC1-7):H01L21/31 主分类号 C23C16/44
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