发明名称 |
Method for producing thin film |
摘要 |
A thin film producing method in which the wafer film forming processing for a wafer to be a product may be carried out efficiently to shorten the processing time and to raise the operating ratio of the device. In a thin film deposition method using a single wafer processing for forming a thin film by chemical reaction under heat, a pseudo-process is provided which operates to suppress variations in the film thickness caused by the temperature in a reaction chamber 11. This pseudo process is the pre-heating processing of heating the reaction chamber 11 before actually charging the wafer W into the reaction chamber 11.
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申请公布号 |
US2002187649(A1) |
申请公布日期 |
2002.12.12 |
申请号 |
US20020162728 |
申请日期 |
2002.06.04 |
申请人 |
NEC CORPORATION |
发明人 |
NAKAMURA NAOKI;FUKUMAKI NAOMI;ABE TAKAYUKI |
分类号 |
C23C16/44;C23C16/52;H01L21/31;H01L21/314;H01L21/316;H01L21/318;(IPC1-7):H01L21/31 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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