发明名称 |
METHOD OF FORMING A REVERSE GATE STRUCTURE WITH A SPIN ON GLASS PROCESS |
摘要 |
The present invention provides a method that includes defining a dummy gate structure comprising a spin on glass on a semiconductor substrate, forming a dielectric layer over the dummy gate structure, removing the dummy gate structure to form a gate opening within the dielectric layer, and forming a gate material comprising a metal within the gate opening.
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申请公布号 |
US2002185739(A1) |
申请公布日期 |
2002.12.12 |
申请号 |
US20010878690 |
申请日期 |
2001.06.11 |
申请人 |
MA YI;SHAO HUILI;TAYLOR JOSEPH A.;YEN ALLEN |
发明人 |
MA YI;SHAO HUILI;TAYLOR JOSEPH A.;YEN ALLEN |
分类号 |
H01L21/336;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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