| 发明名称 |
Method for low-temperature sharpening of silicon-based field emitter tips |
| 摘要 |
A low temperature process for silicon-based field emitter tip sharpening. A rough silicon-based field emitter tip is exposed to xenon difluoride gas in a process chamber to carry out low-temperature, isotropic etching of the rough silicon-based field emitter tip to produce a final, sharpened field emitter tip.
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| 申请公布号 |
US2002187714(A1) |
申请公布日期 |
2002.12.12 |
| 申请号 |
US20010880160 |
申请日期 |
2001.06.12 |
| 申请人 |
MILLIGAN DONALD J.;DUNFIELD JOHN STEPHEN |
发明人 |
MILLIGAN DONALD J.;DUNFIELD JOHN STEPHEN |
| 分类号 |
H01J9/02;(IPC1-7):H01J9/04 |
主分类号 |
H01J9/02 |
| 代理机构 |
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