发明名称 Method of forming patterned thin film and method of fabricating micro device
摘要 In a method of forming a patterned thin film, a first film to be patterned and a peelable film are sequentially formed on a base layer, and an undercut mask is then formed thereon. Then, using of the mask, the peelable film and the first film to be patterned are etched selectively to form a first patterned thin film. During the etching, a substance that forms the first film to be patterned deposits to form a deposition film on the peelable film. Then, a film to be patterned is formed over the entire surface. During the formation, a substance that forms the film to be patterned deposits to form another deposition film on the peelable film. The mask and the peelable film are then peeled off to remove the deposition films together.
申请公布号 US2002187430(A1) 申请公布日期 2002.12.12
申请号 US20020157891 申请日期 2002.05.31
申请人 TDK CORPORATION 发明人 WATANABE HISAYOSHI
分类号 C23C14/04;G03F7/20;G03F7/38;G11B5/31;G11B5/39;H01F41/32;H01F41/34;H01L43/08;H01L43/12;(IPC1-7):G03F7/00;G03F7/34 主分类号 C23C14/04
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