PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

摘要

A p−type high−resistance layer (2) and an n−type base layer (3) are sequentially epitaxial−grown on a p−type SiC substrate (1). After a source layer (4) is formed in the base layer (3) by ion implanting, a trench (7) penetrating the source layer (4) and a base layer (5) and reaching the high−resistance layer (2) is formed by dry etching (first etching) using high−density plasma with an Al mask (6) kept attached. Although a shape abnormality called a micro−trench (8) occurs on the bottom end of the trench (7), the radius of curvature of the micro−trench (8) may be increased by dry−etching the entire surface under a strong isotropy condition after the Al mask (6) is removed.