METHOD OF FABRICATING SEMICONDUCTOR DEVICE

摘要

A method of fabricating a semiconductor device,capable of improving the in−plane uniformity of a silicon nitride film or a silicon oxynitride film to be formed,and increasing a production efficiency at the film forming.The method comprises the steps of forming on a silicon substrate a first film consisting of a silicon oxide film or a silicon oxynitride film,forming a second film consisting of one tetrachlorosilane monomolecular layer,and nitriding the second film to form a third film consisting of one silicon nitride monomolecular layer.The second film forming step and the third film forming steps are repeated specified number of times to form a silicon nitride film of a specified film thickness.A fabrication device comprises a plurality of silicon substrates disposed on shelf−shaped wafer ports,a process gas being supplied toward above a reaction pipe from a process gas supply pipe.