发明名称 Method and system for reducing damage to substrates during plasma processing with a resonator source
摘要 A method and system for reducing damage to substrates (e.g., wafers) during plasma processing by using a high pressure source. A thin electrostatic shield enables a large number of thin slots to be formed in an electrostatic shield while still being able to excite the plasma. The bottom of the slots and the top of the substrate are separated such that the mean free path of the plasma particles is between 0.5% and 2% of the distance between the bottom of the slots and the substrate holder.
申请公布号 US2002187280(A1) 申请公布日期 2002.12.12
申请号 US20020175806 申请日期 2002.06.21
申请人 TOKYO ELECTRON LIMITED 发明人 JOHNSON WAYNE L.;SIRKIS MURRAY D.
分类号 C23C16/507;H01J37/32;(IPC1-7):C23F1/00;C03C25/68;C23C16/00;H01L21/469;H01L21/31 主分类号 C23C16/507
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