发明名称 |
DRAM device and method of manufacturing the same |
摘要 |
A method of manufacturing a DRAM device comprises forming a bit line interlayer insulating layer over a substrate over which a bit line pattern is formed; planarizing the bit line interlayer insulating layer; forming enlarged grooves exposing a conductive layer of the bit line pattern; forming bit lines; forming a silicon nitride layer over the substrate; forming a silicon nitride pattern having silicon nitride spacers formed on side walls of the enlarged grooves positioned on the conductive layer; forming the bit lines at the enlarged width portions of the bit line pattern; forming storage node contacts, storage nodes, a dielectric layer, and plate electrodes at a cell area; forming a wiring interlayer insulating layer on the substrate; forming metal contact holes; and forming plugs filling the metal contact holes.
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申请公布号 |
US2002187598(A1) |
申请公布日期 |
2002.12.12 |
申请号 |
US20020207169 |
申请日期 |
2002.07.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK BYUNG-JUN;LEE KYU-HYUN |
分类号 |
H01L27/10;H01L21/60;H01L21/768;H01L21/8242;H01L23/485;H01L23/522;(IPC1-7):H01L21/823 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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