| 发明名称 |
PROCESS FOR TREATING A POLISHED SEMICONDUCTOR WATER IMMEDIATELY AFTER THE SEMICONDUCTOR WAFER HAS BEEN POLISHED |
| 摘要 |
A process is provided for treating a polished semiconductor wafer immediately after the semiconductor wafer has been polished. The semiconductor wafer is brought into contact with an aqueous treatment agent solution and its polished surface is oxidized by the action of the aqueous treatment agent solution.
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| 申请公布号 |
US2002187639(A1) |
申请公布日期 |
2002.12.12 |
| 申请号 |
US19980032305 |
申请日期 |
1998.02.27 |
| 申请人 |
HENNHOFER HEINRICH;BUSCHHARDT THOMAS;MANGS FRANZ;WENSAUER GERLINDE |
发明人 |
HENNHOFER HEINRICH;BUSCHHARDT THOMAS;MANGS FRANZ;WENSAUER GERLINDE |
| 分类号 |
H01L21/304;H01L21/306;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/304 |
| 代理机构 |
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代理人 |
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| 主权项 |
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