Power semiconductor devices having linear transfer characteristics and methods of forming and operating same

摘要

Power MOSFET devices provide highly linear transfer characteristics (e.g., Id v. Vg) and can be used effectively in linear power amplifiers. These linear transfer characteristics are provided by a device having a channel that operates in a linear mode and a drift region that simultaneously supports large voltages and operates in a current saturation mode. A relatively highly doped transition region is provided between the channel region and the drift region. Upon depletion, this transition region provides a potential barrier that supports simultaneous linear and current saturation modes of operation. Highly doped shielding regions may also be provided that contribute to depletion of the transition region.