METHOD FOR REMOVING POLYSILANE FROM A SEMICONDUCTOR WITHOUT STRIPPING

摘要

A method for removing polysilane from a semiconductor substrate without stripping during manufacture of a semiconductor device, comprising:a) coating a polysilane on a semiconductor substrate and coating a resist on the polysilane;b) patterning the resist with exposure and development;c) transferring the pattern from the resist to the polysilane using an etch process selective to the resist;d) stripping the resist;e) transferring the pattern from the polysilane to a hardmask using an etch selective to the hardmask;f) subjecting the polysilane to thermal or plasma/thermal oxidation to convert the polysilane to silica; andetching the substrate and stripping off the hard mask.