| 摘要 |
<p>The present invention relates to an electroless-plating solution useful for forming a protective film for selectively protecting the surface of the exposed interconnects of a semiconductor device which has such an embedded interconnect structure that an electric conductor, such as copper or silver, is embedded in fine recesses for interconnects formed in the surface of a semiconductor substrate, and to a semiconductor device in which the surface of the exposed interconnects is selectively protected with a protective film. The electroless-plating solution contains cobalt ions, a complexing agent and a reducing agent containing no alkali metal.</p> |
