发明名称 METHOD FOR MANUFACTURING GROUP-III NITRIDE COMPOUND SEMICONDUCTOR DEVICE
摘要 <p>After forming a p-type pedestal electrode forming layer on a translucent electrode forming layer, first and second heat treatment steps for alloying the layer are performed. Heat treatment in the first heat treatment step is performed at a relatively low temperature in an atmosphere containing oxygen, and heat treatment in the second heat treatment step is performed at a relatively high temperature in an atmosphere containing no oxygen.</p>
申请公布号 WO2002099901(P1) 申请公布日期 2002.12.12
申请号 JP2002005431 申请日期 2002.06.03
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