| 摘要 |
PURPOSE: A method for forming an STI(Shallow Trench Isolation) of semiconductor devices is provided to improve a step coverage and to reduce sidewall defects between an isolation region and an active region by using SEG(Selective Epitaxial Growth). CONSTITUTION: A trench is formed in a substrate(51) by selective etching a pad oxide layer(52), a nitirde layer and the substrate(51). An oxide spacer(54a) is formed at both sidewalls of the trench. An SEG silicon layer(55a) is grown partially in the trench by using an SEG. A thermal oxide layer(56) is grown so as to fill in the trench by annealing the surface of the SEG silicon layer(55a). An oxide layer and an SOG(Spin On Glass) layer are sequentially formed on the entire surface of the resultant structure. The nitride layer is exposed by selectively removing the SOG layer and the oxide layer. The exposed nitride layer is then removed.
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