发明名称 |
Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation |
摘要 |
A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes the problem of fluorine from a fluorine containing dielectric reacting with other materials while maintaining a bulk dielectric material of sufficiently high or original fluorine content to maintain an effective low dielectric constant in semiconductor chip wiring interconnect structures.
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申请公布号 |
US2002185741(A1) |
申请公布日期 |
2002.12.12 |
申请号 |
US20020205526 |
申请日期 |
2002.07.25 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BABICH KATHERINA;CALLEQARI ALESSANDRO;COHEN STEPHEN ALAN;GRILL ALFRED;JAHNES CHRISTOPHR VINCENT;PATEL VISHNUBHAI VITTHALBHAI;PURUSHOTHAMAN SAMPATH;SAENGER KATHERINE LYNN |
分类号 |
H01L21/3105;H01L21/312;H01L21/314;H01L21/316;H01L23/532;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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