| 摘要 |
<p>A high-reliability semiconductor device comprising a first capacitor electrode, a capacitor insulation film including titanium oxide as a main constituent material and formed so as to contact the first capacitor electrode, and a second capacitor electrode formed so as to contact the capacitor insulation film, wherein a conductive oxide film including ruthenium oxide or iridium oxide as a main constituent material is used for the first and second capacitor electrodes. Or, a gate insulation film having a leak current-restricting titanium silicate film and titanium oxide is used.</p> |
