| 摘要 |
<p>A method and apparatus for cleaning semiconductor wafers, next generation lithography (NGL) masks, and optical photomasks as well as test wafers and in service NGL and optical masks is disclosed. The method and apparatus utilize reactive gases and gas mixtures and mechanical agitation to enhance particle removal. The addition of a reactive gas process to an inert gas feed enhances the plasma cleaning process by breaking chemical bonds which form between surfaces particles and a substrate, consequently improving cleaning efficiency.</p> |
