| 摘要 |
PURPOSE: A manufacturing method of a semiconductor device is provided to enhance of the performance of the semiconductor device, and to restrict fine holes by improving the flatness of the semiconductor film. CONSTITUTION: A method of manufacturing a semiconductor device comprises the steps of forming a base insulating film(11) on an insulating surface; forming an amorphous semiconductor film(12) on the base insulating film; and irradiating the amorphous semiconductor film with laser light to form a semiconductor film having a crystalline structure, wherein the film deposition temperature of the base insulating film is equal to film deposition temperature of the amorphous semiconductor film. An electronic appliance is provided with a TFT(Thin Film Transistor) to lower off-current value and restrict the fluctuation. The film deposition temperature is set to substantially the same temperature between the base insulating film and the amorphous semiconductor film to improve flatness of the semiconductor film. Then, laser light irradiation is conducted. |
