SEMICONDUCTOR LASER DIODE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor laser diode and a manufacturing method thereof are provided to decrease the oscillation start current by reducing a width of a ridge and controlling a thickness of an optical waveguide layer. CONSTITUTION: A first clad layer(2) is deposited on a substrate(1). An active layer(3) is deposited on the first clad layer(2). An optical waveguide layer(4) is deposited on the active layer(3). A second clad layer and a contact layer(5,6) are formed on a central region of the optical waveguide layer(4) so as to form a ridge with a mesa structure. A high resistance region(7) is formed through proton bombardment on both sides of the ridge except an upper surface of the contact layer(6) of the ridge with the mesa structure and the optical waveguide layer(4) where there is no ridge. An insulating layer(21) is formed on an exposed region except the upper surface of the contact layer(6) of the ridge and a region formed on a side surface of the ridge in the high resistance area(7).