| 摘要 |
PURPOSE: A polysilicon thin film transistor and a method for manufacturing the same are provided to decrease crystallization temperature and to reduce contact resistance of an active region by additionally implanting Ge ions into the active region. CONSTITUTION: An active layer(3a) is formed on an insulating substrate(1). After depositing a gate insulating layer(4) on the entire surface of the resultant structure, a gate electrode(5a) is formed on the gate insulating layer of the active layer(3a). Germanium(Ge) ions are implanted to the active layer(3a) by using the gate electrode(5a) as a mask. A source and drain region(3b,3c) are formed in the active region(3a) by implanting impurity ions into the active region using the gate electrode(5a) as a mask and annealing. After depositing an interlayer dielectric(6) on the resultant structure, a contact hole is formed to expose the source and drain region(3b,3c). A source and drain region(8a,8b) are formed to connect with the source and drain region(3b,3c) via the contact hole.
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