METHOD FOR FORMING TRANSISTOR

摘要

PURPOSE: A method for forming a transistor is provided to improve properties of a gate oxide and to prevent a breakage of the gate oxide due to a stress by annealing a thermal oxide at ND3 atmosphere. CONSTITUTION: An STI(Shallow Trench Isolation) is formed in a silicon substrate so as to define an active region and a field region(200). A thermal oxide is grown on the active region of the silicon substrate by a high temperature furnace using mixed gases of O2/O3(210a). A gate oxide is then formed by annealing the thermal oxide at ND3 atmosphere(210b). Preferably, the high temperature is 800-850°C and the thickness of the thermal oxide is about 30-40Å.