发明名称 METHOD FOR PRODUCING NITRIDE MONOCRYSTALS
摘要 The inventive method exploits the fact that in solutions or melts which contain certain organic substances, small nitride crystallites consisting of GaN or AlN are formed by thermal reaction and decomposition. A vessel containing the melt is kept at a first temperature T1. In the vessel is a substrate nucleus of the nitride to be formed, which is heated to second temperature T2 through the input of energy, where T2>T1. Epitaxial growth from the melt then takes place on the surface of the substrate nucleus. The energy input can be carried out in different ways.
申请公布号 EP1155170(B1) 申请公布日期 2002.12.11
申请号 EP20000908957 申请日期 2000.02.01
申请人 OSRAM OPTO SEMICONDUCTORS GMBH & CO. OHG 发明人 HAERLE, VOLKER
分类号 C30B29/38;C23C18/12;C30B7/00;C30B7/14;C30B9/00;C30B17/00;H01L21/208;H01L33/00;(IPC1-7):C30B7/00 主分类号 C30B29/38
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