发明名称 METHOD FOR GENERATING INTERNAL CLOCKS IN SEMICONDUCTOR MEMORY DEVICE AND INTERNAL CLOCK GENERATION CIRCUIT
摘要 PURPOSE: A method for generating internal clocks in a semiconductor memory device and an internal clock generation circuit are provided to sample correctly data by generating an internal clock synchronized with an external clock. CONSTITUTION: A receiver(10) receives an external clock. A delay compensation circuit(40) receives an output clock of the receiver(10) and delays the received clock during a predetermined time. An external control delay portion(30) delays an output of the delay compensation circuit(40) in response to an external digital code. The first internal clock driver(50) generates an internal clock by driving an output of the external control delay portion(30). The second internal clock driver(51) is installed at a rear end portion of a fixing delay portion(60). The delay compensation circuit(40) is formed with a variable delay line(41), a compensation delay portion(42), a control delay time delay portion(43), and a phase decision portion(44).
申请公布号 KR20020091931(A) 申请公布日期 2002.12.11
申请号 KR20010030749 申请日期 2001.06.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, NAM SEOK;PARK, JEONG U
分类号 G11C11/407;G11C7/22;H03L7/081;(IPC1-7):G11C11/407 主分类号 G11C11/407
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