| 摘要 |
<p>A method of forming a crystalline, phase-change layer that remains atomically smooth on its surface. Also, an atomically smooth, crystalline, phase-change layer made according to this method. The method can include forming a phase-change layer (80) over a substrate (60), forming a thick capping layer (90) over the phase-change layer (80), changing the phase-change layer (80) from an amorphous phase to a crystalline phase, removing the thick capping layer (90), and forming a thin capping layer over the phase-change layer. <IMAGE></p> |
