METHOD FOR FORMING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A metal interconnection formation method of semiconductor devices is provided to reduce a contact resistance and to improve a surface morphology while entirely filling a contact hole by performing a surface treatment of a barrier metal film. CONSTITUTION: After forming a conductive layer(110) on a semiconductor substrate(100), an interlayer dielectric(130) having a hole region(120) is formed on the conductive layer(110). A barrier metal film is formed on inner wall and bottom of the hole region(120) and on the interlayer dielectric(130). The surface of the barrier metal film is treated by dipping the resultant structure in solutions contained OH radical or by spin-coating a material contained OH radical on the barrier metal film, thereby forming a surface-treated barrier metal film(140a). Then, a planarized metal interconnection is formed on the surface-treated barrier metal film(140a).