POLY CRYSTALLIZATION METHOD AND TFT AND LCD FABRICATING METHODS USING THE SAME

摘要

PURPOSE: A poly crystallization method and methods for fabricating thin film transistors and a liquid crystal display device by using the same are provided to minimize an amount of non-reaction metal by using a metal collecting layer for improving the characteristics of the thin film transistors. CONSTITUTION: A poly crystallization method includes the steps of forming a buffer layer(202) on an insulating substrate(201), forming a metal collecting layer(204a) on the buffer layer, depositing an amorphous silicon layer(203) on the metal collecting layer by plasma enhanced chemical vapor deposition, forming a metal thin film layer(204) on the amorphous silicon layer, and applying electric fields to the metal thin film layer and simultaneously heating the substrate to crystallize the amorphous silicon layer to a poly crystalline silicon layer.