METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING SILICIDE LAYERS

摘要

PURPOSE: A method for manufacturing a semiconductor device having silicide layers is provided to improve an integration degree and an operation speed by independently forming a gate silicide layer and a junction silicide layer. CONSTITUTION: An active region is defined by forming an isolation pattern(180) on a semiconductor substrate(100). A gate oxide and a polysilicon layer are sequentially formed on the active region. A gate silicon portion and a recessed silicon portion are formed by recessing a desired portion of the polysilicon layer. After forming an upper conductive pattern on the recessed silicon portion, a lower gate silicide layer(200) is formed on the gate silicon portion. A gate silicon pattern(123) is formed at lower part of the lower gate silicide layer(200) by sequentially etching the upper conductive pattern and the recessed silicon portion using the lower gate silicide layer(200) as a mask. A spacer(160) is formed at both sidewalls of the lower gate silicide layer(200) and the gate silicon pattern(123). An upper gate silicide layer(300) and a junction silicide layer(301) are simultaneously formed on the lower gate silicide layer(200) and the exposed active region, respectively.