| 摘要 |
PURPOSE: A thin film transistor fabricating method for a liquid crystal display device integrating a driving circuit part is provided to improve the performance, the uniformity, and the reliability by using a photoresist pattern used in the masking step of gate electrodes to an ion-doping step as a mask. CONSTITUTION: A thin film transistor fabricating method for a liquid crystal display device integrating a driving circuit part includes forming an active layer for TFTs of pixel parts, and active layers(112a,113a) for n- and p- type TFTs(Xa,Xb) of driving parts by complete melting regime energy density on an insulating substrate, forming a pattern for a gate insulating film, gate electrodes(120a,120b), and a first photoresist(PR) pattern in sequence by a single masking step, forming n-type ohmic contact layers(112b,113b) by n+ doping, forming second PR patterns by etching the stepped parts between the first PR pattern and the gate electrodes and forming a gate insulating film by etching the gate insulating film pattern, forming a lightly doped drain(LDD) layer with the active layer between the first PR pattern and the gate electrodes by n- doping, and forming a p-type ohmic contact layer with the n-type ohmic contact layer of the p-type TFT parts and the LDD layer by p+ doping. |
