SEMICONDUCTOR TRANSISTOR USING L-SHAPED SPACER AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor transistor and a method for manufacturing the same are provided to minimize an out-diffusion in an LDD(Lightly Doped Drain) region and to reduce a resistance of the LDD region by forming the LDD region after forming simultaneously a middle doped and heavily doped junction regions using an L-shaped spacer. CONSTITUTION: A gate pattern(300) is formed on a semiconductor substrate(100). A first insulating layer(130) is formed on the entire surface of the substrate(100) having the gate pattern(300). A third spacer(142) and a second spacer(151) are sequentially formed on the first insulating layer(130) of both sidewalls of the gate pattern, wherein the third and second spacers(142,151) have an L-shape including a horizontal protrusion. A heavily doped junction region(180) and a middle doped junction region are simultaneously formed in the substrate by implanting heavily doped ions using the gate pattern(300) and the second L-shaped spacer(151) as a mask. After annealing the resultant structure, the second L-shaped spacer(151) is removed. An LDD region is formed at lower of the horizontal protrusion of the third L-shaped spacer(142) by implanting lightly doped ions.