Reference cell for a 1T/1C ferroelectric memory

摘要

A reference cell for a 1T/1C ferroelectric memory comprising a transistor of a first polarity type having a gate coupled to a reference cell word line, and a current path coupled between a bit line and an internal reference cell node; a transistor of a second polarity type having a gate coupled to a precharge line, and a current path coupled between a source of supply voltage and the internal reference cell node; and a ferroelectric capacitor coupled between the internal reference cell node and a plate line, such that the internal reference cell node can be initialized to the full supply voltage level. <IMAGE>