发明名称 |
Integrated circuit structure |
摘要 |
<p>A memory array (25) and some addressing circuitry (30) therefor are formed by creating circuit elements (26) at the crossing-points of two layers of electrode conductors (70, 76) that are separated by a layer of a semiconductor material (72). The circuit elements formed at the crossing-points function as data storage devices in the memory array, and function as connections for a permuted addressing scheme for addressing the elements in the array. In order to construct the addressing circuitry, the electrode conductors are fabricated with a controlled geometry at selected crossing-points such that selected circuit elements have increased or decreased cross-sectional area. By applying a programming electrical signal to the electrodes, the electrical characteristics (e.g. resistance) of selected circuit elements can be changed according to the controlled electrode geometry. <IMAGE></p> |
申请公布号 |
EP1265286(A2) |
申请公布日期 |
2002.12.11 |
申请号 |
EP20020253285 |
申请日期 |
2002.05.10 |
申请人 |
HEWLETT-PACKARD COMPANY |
发明人 |
TAUSSIG, CARL;ELDER, RICHARD |
分类号 |
H01L27/10;G11C8/10;G11C17/16;H01L23/525;H01L23/538;H01L25/10;(IPC1-7):H01L27/102 |
主分类号 |
H01L27/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|