METHOD FOR FORMING COPPER METAL WIRING

摘要

PURPOSE: A method for forming a copper metal wiring is provided to improve tolerance of electro migration or stress migration by using taper etch processing. CONSTITUTION: After forming the first interlayer dielectric(4) on a substrate(1), a trench and a contact hole having sloped profile are simultaneously formed by taper etching of the first interlayer dielectric(4). A diffusion barrier metal film(6) is formed on the surface of the sloped contact hole and trench. A metal wiring and a contact plug are formed by filling a copper film(8) into the trench and the contact hole, respectively. A diffusion barrier insulating layer(9) and the second interlayer dielectric(10) are sequentially formed on the entire surface of the resultant structure.