| 摘要 |
PURPOSE: A method for processing the surface of an organic insulating layer and a method for manufacturing substrate of a thin film transistor using the same are provided to enhance an adhesive force between the organic insulating layer and a transparent electrode. CONSTITUTION: A thin film transistor array including gate lines(4) and source/drain electrode(16,18) is formed on a lower substrate(1). An organic insulating layer(30) is formed on the entire surface of the resultant structure. A plurality of contact holes(19,23,5,7) are formed to expose the drain electrode(18), a storage electrode, a data pad electrode(8), and a gate pad electrode(6), respectively by selectively etching the organic insulating layer(30). A surface processing of the organic insulating layer(30) is performed by using He plasma. Transparent electrode patterns including a pixel electrode and a protection electrode are formed on the organic insulating layer(30). |
