| 摘要 |
PURPOSE: A method for measuring thickness of a selective epitaxial growing film is provided to improve a reliability and a stability of processing by exactly measuring the thickness of a thin film grown by an SEG(Selective Epitaxial Growth). CONSTITUTION: After forming an isolation layer(11) at a desired region of a silicon substrate(10), a step difference(A) between an active region(X) and a field region(Y) is measured by scanning using a scanning tip according to the profile thereof. After growing a conductive layer(12) of Si or SiGe on the active region(X) by using an SEG, a varied step difference(B) between the active region(X) and the field region(Y) is measured by scanning using the scanning tip according to the profile of the grown conductive layer(12). Thereby, the grown film thickness(C) is measured by subtracting the step difference(A) from the varied step difference(B).
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