| 摘要 |
<p>PURPOSE: A method for forming shallow junction using silicon germanium selective epitaxial growth is provided to effectively prevent a diffusion of impurities via a gate and a reduction of effective channel length by using an SEG(Selective Epitaxial Growth) of SiGe. CONSTITUTION: A polysilicon gate(22) and a barrier film(23) of a spacer structure are sequentially formed on a silicon substrate(20). After partially removing the polysilicon gate(22) and the silicon substrate(20), a SiGe layer(24) is then grown on the removed region by using an SEG. Lightly doped dopants are implanted to the SiGe layer(24). A nitride spacer(26') is formed at both sidewalls of the barrier film(23). By implanting heavily doped dopants into the SiGe layer(24) and annealing the resultant structure, source and drain regions(27) and a source/drain extension(28) are formed.</p> |
