发明名称 |
Method for fully self-aligned FET technology |
摘要 |
This invention provides methods of forming a field-effect transistor in an integrated circuit using self-aligning technology on the basis of a gate electrode and sidewall spacer masking procedure both for forming the device isolation features and the source and drain regions. This invention enables an increase of the integration-density of semiconductor devices, a minimization of the parasitic capacitances in field-effect transistor devices, and a quicker manufacturing process.
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申请公布号 |
US6492210(B2) |
申请公布日期 |
2002.12.10 |
申请号 |
US20010810771 |
申请日期 |
2001.03.16 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WIECZOREK KARSTEN;HORSTMANN MANFRED;STEPHAN ROLF;RAAB MICHAEL |
分类号 |
H01L21/336;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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