发明名称 |
Semiconductor device having anti-reflective cap and spacer, method of manufacturing the same, and method of manufacturing photoresist pattern using the same |
摘要 |
A semiconductor device including an anti-reflective cap and spacer, a method of manufacturing the same, and a method of forming a photoresist pattern using the same are provided. The semiconductor device according to the present invention includes an anti-reflective cap and an anti-reflective spacer on an upper surface and side walls of a reflective pattern formed on the semiconductor substrate. Therefore, the deformation of the photoresist pattern by the light reflected from the reflective pattern is minimized during a photolithography process.
|
申请公布号 |
US6492701(B1) |
申请公布日期 |
2002.12.10 |
申请号 |
US19990324072 |
申请日期 |
1999.06.01 |
申请人 |
SAMSUNG ELECTRONICS CO. LTD. |
发明人 |
KIM IN-SUNG;LEE JUNG-HYEON;CHO HAN-KU |
分类号 |
H01L21/027;G03F7/11;H01L21/28;H01L21/768;H01L31/0232;(IPC1-7):H01L31/023 |
主分类号 |
H01L21/027 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|