发明名称 Semiconductor device having anti-reflective cap and spacer, method of manufacturing the same, and method of manufacturing photoresist pattern using the same
摘要 A semiconductor device including an anti-reflective cap and spacer, a method of manufacturing the same, and a method of forming a photoresist pattern using the same are provided. The semiconductor device according to the present invention includes an anti-reflective cap and an anti-reflective spacer on an upper surface and side walls of a reflective pattern formed on the semiconductor substrate. Therefore, the deformation of the photoresist pattern by the light reflected from the reflective pattern is minimized during a photolithography process.
申请公布号 US6492701(B1) 申请公布日期 2002.12.10
申请号 US19990324072 申请日期 1999.06.01
申请人 SAMSUNG ELECTRONICS CO. LTD. 发明人 KIM IN-SUNG;LEE JUNG-HYEON;CHO HAN-KU
分类号 H01L21/027;G03F7/11;H01L21/28;H01L21/768;H01L31/0232;(IPC1-7):H01L31/023 主分类号 H01L21/027
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