| 摘要 |
A high-voltage signal detecting circuit for use in a semiconductor memory device includes a signal transfer section having first nMOSFET, pMOSFET, second nMOSFET and third nMOSFET serially connected together in this order from a first input terminal to a ground line. The gates of pMOSFET and second and third nMOSFETs are connected to a second input terminal for receiving the supply source potential. A discharge transistor is connected between the first node which connects the pMOSFET and second nMOSFET together and the ground line, to discharge electric charge from the first node before application of the source potential. The discharge section provides a high-speed start-up of the memory device.
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