| 摘要 |
In a method for manufacturing a semiconductor device, a shallow trench isolation layer made of silicon oxide is formed in a semiconductor substrate to partition an area for forming a MOS transistor. Then, first impurities are introduced into the MOS transistor forming area to adjust a threshold voltage of the MOS transistor. Then, second impurities are introduced into end portions of the MOS transistor forming area of the semiconductor substrate.
|
