| 发明名称 |
High quality oxide for use in integrated circuits |
| 摘要 |
An oxide for use in integrated circuits is substantially stress-free both in the bulk and at the interface between the substrate and the oxide. The interface is planar and has a low interface trap density (Nit). The oxide has a low defect density and may have a thickness of less than 1.5 nm or less.
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| 申请公布号 |
US6492712(B1) |
申请公布日期 |
2002.12.10 |
| 申请号 |
US20000597077 |
申请日期 |
2000.06.20 |
| 申请人 |
AGERE SYSTEMS GUARDIAN CORP. |
发明人 |
CHEN YUANNING;CHETLUR SUNDAR SRINIVASAN;MERCHANT SAILESH MANSINH;ROY PRADIP KUMAR |
| 分类号 |
H01L27/04;C30B33/00;H01L21/28;H01L21/31;H01L21/316;H01L21/336;H01L21/469;H01L21/76;H01L21/822;H01L21/8232;H01L21/8238;H01L27/092;H01L29/51;H01L29/78;H01L29/786;(IPC1-7):H01L21/316 |
主分类号 |
H01L27/04 |
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