发明名称 |
METHOD OF SYNTHESIS OF SILANE |
摘要 |
FIELD: inorganic chemistry, chemical technology. SUBSTANCE: invention relates to technology of synthesis of semiconductive silicon and technology of formation of different silicon-containing layers in microelectronics. Silane is synthesized by interaction of quartzite with hydrogen-containing compound at heating. Lithium hydride is used as hydrogen-containing compound. Reaction is performed in atmosphere of inert gas or hydrogen at temperature 600-800 C. After chilling melt is treated with protonic acids aqueous solution. Ratio Li : Si in the parent charge is taken in atomic ratio = 8:1. EFFECT: increased yield of silane, decreased content of impurities, decreased cost. 2 cl, 2 ex
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申请公布号 |
RU2194009(C1) |
申请公布日期 |
2002.12.10 |
申请号 |
RU20010109651 |
申请日期 |
2001.04.10 |
申请人 |
OTKRYTOE AKTSIONERNOE OBSHCHESTVO "NOVOSIBIRSKIJ Z;AVOD KHIMKONTSENTRATOV |
发明人 |
LAVRENT'EV V.I.;ZELENIN JU.M.;LAVRENJUK P.I.;MURATOV E.P.;MUKHIN V.V.;ROZHKOV V.V.;SOKOLOV V.V.;STONOGA JU.A.;TRUSHNIKOVA L.N. |
分类号 |
C01B33/04;(IPC1-7):C01B33/04 |
主分类号 |
C01B33/04 |
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