发明名称 METHOD OF SYNTHESIS OF SILANE
摘要 FIELD: inorganic chemistry, chemical technology. SUBSTANCE: invention relates to technology of synthesis of semiconductive silicon and technology of formation of different silicon-containing layers in microelectronics. Silane is synthesized by interaction of quartzite with hydrogen-containing compound at heating. Lithium hydride is used as hydrogen-containing compound. Reaction is performed in atmosphere of inert gas or hydrogen at temperature 600-800 C. After chilling melt is treated with protonic acids aqueous solution. Ratio Li : Si in the parent charge is taken in atomic ratio = 8:1. EFFECT: increased yield of silane, decreased content of impurities, decreased cost. 2 cl, 2 ex
申请公布号 RU2194009(C1) 申请公布日期 2002.12.10
申请号 RU20010109651 申请日期 2001.04.10
申请人 OTKRYTOE AKTSIONERNOE OBSHCHESTVO "NOVOSIBIRSKIJ Z;AVOD KHIMKONTSENTRATOV 发明人 LAVRENT'EV V.I.;ZELENIN JU.M.;LAVRENJUK P.I.;MURATOV E.P.;MUKHIN V.V.;ROZHKOV V.V.;SOKOLOV V.V.;STONOGA JU.A.;TRUSHNIKOVA L.N.
分类号 C01B33/04;(IPC1-7):C01B33/04 主分类号 C01B33/04
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