发明名称 TWO-WAY CONTROL THYRISTOR
摘要 FIELD: semiconductor power components. SUBSTANCE: turn-off structure of two-way control thyristor should turn on spontaneously due to unwanted migration of charge carriers. This is attained due to the fact that degree of closure of regions rises in direction of isolating region. In particular it may be attained due to the fact that density of shorting regions per surface area unit tends to maximum value in direction of isolating region. Best solution is using solid rectilinear shorting region passing along isolating region. EFFECT: enhanced reliability of isolation between thyristor structures. 8 cl, 4 dwg
申请公布号 RU2194339(C2) 申请公布日期 2002.12.10
申请号 RU19980104021 申请日期 1998.03.05
申请人 ASEA BRAUN BOVERI AG 发明人 TOMAS KENNET;SHTRAJT PETER
分类号 H01L29/74;H01L29/08;H01L29/747 主分类号 H01L29/74
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