| 摘要 |
FIELD: microelectronics. SUBSTANCE: method used for silicon nitride reactive ion etching on wafer surfaces in manufacturing very large-scale integrated circuits includes etching of Si3N4 surface in plasma of gas mixture of freon with oxygen and argon. Used as freon is 1,2,2,2 tetrafluoroethane (C2F4H2). EFFECT: enhanced etching selectivity of silicon nitride relative to silicon dioxide. 2 tbl |
