| 摘要 |
A plasma processing apparatus that allows processing of high quality under a wider processing condition is provided by optimizing the distance between a plasma region and a substrate even in the case where the processing condition such as process pressure or high frequency output differs. A plasma chamber is divided into a lower plasma chamber and an upper plasma chamber. A process chamber and the lower plasma chamber are connected flexibly by a lower chamber bellows. The lower plasma chamber and the upper plasma chamber are connected flexibly by an upper chamber bellows. Since the radioactive species volume is increased when the process pressure is low, the lower and upper plasma chambers are respectively raised. In contrast, since the radioactive species volume is reduced when the process pressure is high, the upper and lower plasma chambers are respectively lowered.
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